2 edition of Electroluminescence of mid-infrared III-V devices found in the catalog.
Electroluminescence of mid-infrared III-V devices
|Statement||L. Zheng ; supervised by K. Singer.|
|Contributions||Singer, K., Electrical Engineering and Electronics.|
“Electroluminescence from III-V self-assembled quantum dots”, D. Wasserman and S.A. Lyon, Book Chapter for “The Handbook of Electroluminescent Materials”, edited by Prof. D.R. Vij, Department of Physics, Kurukshetra University, India, Institute of Physics Publishing, Bristol, U.K (). Mid-infrared Semiconductor Optoelectronics [electronic resource] / edited by Anthony Krier. by Krier, Anthony [editor.] ; SpringerLink (Online service).
Red Light Therapy Lamp, Wolezek 36W 18 LED Infrared Light Therapy Device, nm Red and nm Near Infrared Combo Red Light Bulb for Skin and Pain Relief out of 5 stars $ $ Mid-infrared electroluminescence from type-II In(Ga)Sb quantum dots At the same time, many III-V, II-VI and lead-salt semiconductor alloys can provide bandgaps well into the mid-IR, offering opportunities to engineer semiconducting materials able to serve as the foundation for mid-IR devices mimicking well-established visible, near-IR and.
radiative Auger recombination mechanisms. To date there have been few reports of mid-infrared quantum well LEDs [18, 19, 3, 20, 21] and despite their design flexibility, hardly any concerning mid-infrared superlattices being used in the active region [22, 19]. Previously, we reported  on the photoluminescence and band. We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb 2) exploiting an As-Sb anion exchange reaction.
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Payam Zarrintaj, Masoud Mozafari, in Fundamentals and Emerging Applications of Polyaniline, Electroluminescence devices. Electroluminescence is a phenomenon through which a substance emits light because of an electrical current/field being induced. Electroluminescence is the basis of light-emitting diodes (LEDs) in which a p-n junction diode can emit light when an appropriate.
Electroluminescence deals with the multiplicity of forms related to electroluminescence phenomena. The book reviews some basic observations of electroluminescence, the Gudden-Pohl and Dechene effects, the electroluminescence phenomena in zinc sulfide phosphors, in silicon carbide, and in compounds composed of elements in groups III and Book Edition: 1.
Finally, the most relevant applications of mid-infrared devices are reviewed in industry, gas sensing, spectroscopy, and imaging. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics.
Mid-infrared electroluminescence was obtained from both these LEDs over the temperature range 7– K and both devices exhibit emission coincident with the main CO2 absorption band near μm. We report an experimental investigation of polarization dependence of mid-infrared electroluminescence from type-II InAs/GaInSb interband cascade devices.
The in-plane polarized emission was found to be dominant from a laser structure, supporting the assertion based on the conventional k⋅p theory. The observed electroluminescences from the light-emitting diodes were found.
Light emitting diodes (LEDs) in the mid-infrared (MIR) spectral range require material systems with tailored optical absorption and emission at wavelengths λ > 2 μm. Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode. PDF Tools. /rspa These processes have been shown to be.
In book: Mid-infrared Optoelectronics, pp The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes The completed device. Professor Anthony Krier is the head of the Condensed Matter Division of the Physics Department at Lancaster University, UK.
His research is in the optoelectronic properties of semiconductor and polymer materials and the fabrication of diode and laser devices emitting in the 2–10 µm (mid-infrared) range. InAs/InAsSb structures for mid – infrared LEDs, are the result of my own independent work.
Where I have consulted the published work of others this is acknowledged by explicit references. I confirm that this work has not been submitted in whole or in any part for any other degree or qualification at this university or at.
The roles of the film structure and of the Si-substrate–oxide interface in the EL process of forward biased M/SiO 2 /p-Si diodes were investigated by Kuusela et al.They compared the EL characteristics of eight types of systems with thin and ultrathin (1–10 nm) thermal or CVD SiO 2 films.
The structures consisted of the single SiO 2 or poly Si layer, or SiO 2 –Si layer pair grown. Mid-infrared electroluminescence from carbon-doped GaAs /AlGaAs quantum cascade structures was observed and studied to determine the prospects of hole intersubband transitions for possible use in light emitting devices.
The luminescence spectra exhibit a complex three-peak structure consistent with two heavy-to-heavy hole transitions and thermal emission. The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at μm was studied as a function of applied hydrostatic pressure.
An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant. Using this approach a group of III–V and II–VI samples from near-infrared extending to mid-infrared with photoluminescence intensities in a wider range have been characterized at room temperature to demonstrate the validity and overall performances of the system.
The weaker electroluminescence of quantum cascade lasers in mid-infrared band. Prof. Changqing Chen received his B.S. degree in applied physics, M.S. degree in semiconductor physics and devices from Wuhan University, China in andrespectively.
As a scholarship holder of DAAD Volkswagen Foundation, he achieved his Ph.D. degree in semiconductor physics and devices from University of Erlangen-Nürnberg, Germany in. Mid-infrared electroluminescence in GaAs/AlGaAs structures at the present moment III-V semiconductor lasers are the only viable solution for high power generation of.
Optical output of 50 nW was also observed from IQC devices operating in the μm spectral band.  Recently, Das et al.
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You will only need to do this once. Find out more. IOPscience login / Sign Up. Please note. Electroluminescence II (ISSN Book 65) - Kindle edition by Mueller, Gerd. Download it once and read it on your Kindle device, PC, phones or tablets.
Use features like bookmarks, note taking and highlighting while reading Electroluminescence II (ISSN Book 65). Electroluminescence (EL) is a process by which photons are generated when the excess electron–hole pairs are created by an electric current caused by an externally applied bias.
LEDs and bipolar laser diodes are based on this process, in which the excess carriers are generated across a p–n junction, most frequently under a direct bias V b, as shown in the scheme of Fig. (a). We report the observation of mid-infrared room-temperature electroluminescence from a p-i-n Ge/Ge Sn /Ge double heterostructure diode.
The device structure is grown using low-temperature molecular beam epitaxy. Emission spectra under various injection current densities in the range of A/cm 2 – A/cm 2 show two distinct profiles peaked at eV ( μm) and eV (2. 1 Room temperature up-conversion electroluminescence from a mid-infrared In(AsN) tunnelling diode D.
M. Di Paola,1,2, a) Q. Lu,3 E. Repiso,3 M. Kesaria,3 O. Makarovsky,1 A. Krier,3 and A. Patanè1 1School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK 2Department of Physics and Astronomy, The University of Sheffield, Sheffield, S3 7RH, UK.The practical realisation of optoelectronic devices operating in the 2–10 µm (mid-infrared) wavelength range offers potential applications in a variety of areas from environmental gas monitoring aroun.Strained InAsSb heterostructures are important materials for a variety of new III-V based mid-infrared emitters.
In the study InPSb/InAs light-emitting diodes (LEDs) employing an InAs/InAsSb multiquantum-well (MQW) active region have been investigated. They were characterised using electro-optical techniques and X-ray diffractometry.